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| N Channel Enhancement Mode MOSFET ST2342 5.0A DESCRIPTION ST2342 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE 20V/4.8A, RDS(ON) = 26m (Typ.) @VGS = 4.5V 20V/4.5A, RDS(ON) = 28m @VGS = 2.5V 20V/4.0A, RDS(ON) = 36m @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3 D G 1 1.Gate 2.Source S 2 3.Drain PART MARKING SOT-23-3L 3 42YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST2342S23RG Package SOT-23L Part Marking 42YA Process Code : A ~ Z ; a ~ z ST2342S23RG S23 : SOT-3L23 ; R : Tape Reel ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 N Channel Enhancement Mode MOSFET ST2342 5.0A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical 20 12 5.0 4.0 13 1.0 1.25 0.8 150 -55/150 140 Unit V V A A A W /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 N Channel Enhancement Mode MOSFET ST2342 5.0A ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Condition Min Typ Max Unit V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=12V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=55 VDS5V,VGS=4.5V VGS=4.5V,ID=5.0A VGS=2.5V,ID=4.5A VGS=1.8V,ID=4.0A VDS=15V,ID=4.8A IS=1.0A,VGS=0V 20 0.4 1.0 100 1 10 6 0.026 0.028 0.036 V V nA uA A S 30 0.8 1.2 V Qg Qgs Qgd Ciss Coss Crss td(on) tr VDS=10V VGS=4.5V ID4.8A VDS=10V VGS=0V F=1MHz VDD=10V RL=10 ID=1.0A VGEN=4.5V RG=6 10 1.4 2.1 600 120 100 15 40 45 30 13 nC pF 25 60 65 40 nS td(off) tf STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 N Channel Enhancement Mode MOSFET ST2342 5.0A TYPICAL CHARACTERICTICS (25 Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 N Channel Enhancement Mode MOSFET ST2342 5.0A TYPICAL CHARACTERICTICS (25 Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 N Channel Enhancement Mode MOSFET ST2342 5.0A SOT-23L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 |
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